| PART |
Description |
Maker |
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG
Panasonic
|
| SPM3220 |
GaAs MMICs
|
SANYO
|
| SPM3501 |
GaAs MMICs
|
SANYO
|
| SPM3212 |
GaAs MMICs
|
SANYO
|
| BGA430 |
Silicon MMICs - 30dB LNB Amplifier, 0.9...2.2GHz, SOT363
|
Infineon
|
| Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
